AOD3N50/aou3n50 500v, 3a n-channel mosfet 600v@150 i d (atv gs =10v) 2.8a r ds(on) (atv gs =10v) <3 w symbol v ds theAOD3N50&aou3n50havebeenfabricatedusing anadvancedhighvoltagemosfetprocessthatis designedtodeliverhighlevelsofperformanceand robustnessinpopularacdcapplications. byprovidinglowr ds(on) ,c iss andc rss alongwith guaranteedavalanchecapabilitythesepartscanbe adoptedquicklyintonewandexistingofflinepower supply designs. v ds v units parameter absolute maximum ratings t a =25c unless otherwise noted maximum drainsourcevoltage 500 g d s v ds v gs i dm i ar e ar e as peakdioderecoverydv/dt dv/dt t j ,t stg t l symbol r q ja r q cs r q jc maximumcasetosink a maximumjunctiontocase d,f c/w c/w 1.8 0.5 2.2 mj avalanchecurrent c 60 repetitiveavalancheenergy c derateabove25 o c 57 0.45 a 2 singlepulsedavalancheenergy h 120 mj v/ns 5 p d v drainsourcevoltage 500 junctionandstoragetemperaturerange 50to150 c powerdissipation b v 30 gatesourcevoltage t c =100c a i d t c =25c 2.8 1.8 9 pulseddraincurrent c continuousdrain current b maximumjunctiontoambient a,g t c =25c 55 maximum thermal characteristics units c/w 45 parameter typical w w/ o c maximumleadtemperatureforsoldering purpose,1/8"fromcasefor5seconds 300 c www.freescale.net.cn 1/6 general description features
symbol min typ max units 500 600 bv dss /?tj 0.54 v/ o c 1 10 i gss gatebodyleakagecurrent 100 n a v gs(th) gatethresholdvoltage 3.5 4.1 4.5 v r ds(on) 2.3 3 w g fs 2.8 s v sd 0.78 1 v i s maximumbodydiodecontinuouscurrent 3 a i sm 9 a c iss 221 276 331 pf c oss 25 31.4 38 pf c rss 2.1 2.6 4.1 pf r g 1.9 3.9 5.9 w q g 6.7 8.0 nc q gs 1.7 3.0 nc q gd 2.7 3.2 nc t d(on) 11 13.2 ns t r 19 23.0 ns t d(off) 20.5 24.6 ns staticdrainsourceonresistance v gs =10v,i d =1.5a reversetransfercapacitance v gs =0v,v ds =25v,f=1mhz switching parameters turnonrisetime turnoffdelaytime v gs =10v,v ds =250v,i d =3a, r g =25 w electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss m a v zerogatevoltagedraincurrent id=250a,vgs=0v v ds =0v,v gs =30v drainsourcebreakdownvoltage i d =250a,v gs =0v,t j =25c i d =250a,v gs =0v,t j =150c i dss zerogatevoltagedraincurrent v ds =500v,v gs =0v gatedraincharge v ds =5v,i d =250 m a v ds =400v,t j =125c i s =1a,v gs =0v v ds =40v,i d =1.5a forwardtransconductance dynamic parameters diodeforwardvoltage gateresistance v gs =0v,v ds =0v,f=1mhz totalgatecharge v gs =10v,v ds =400v,i d =3a gatesourcecharge maximumbodydiodepulsedcurrent inputcapacitance outputcapacitance turnondelaytime t d(off) 20.5 24.6 ns t f 15 18.0 ns t rr 134 161 ns q rr 0.89 1.1 m c i f =3a,di/dt=100a/ m s,v ds =100v turnoffdelaytime g turnofffalltime bodydiodereverserecoverycharge i f =3a,di/dt=100a/ m s,v ds =100v bodydiodereverserecoverytime a.thevalueofr q ja ismeasuredwiththedeviceinastillairenvironm entwitht a =25 c. b.thepowerdissipationp d isbasedont j(max) =150 cinato252package,usingjunctiontocasetherm alresistance,andismoreusefulin settingtheupperdissipationlimitforcaseswhere additionalheatsinkingisused. c.repetitiverating,pulsewidthlimitedbyjuncti ontemperaturet j(max) =150 c. d.ther q ja isthesumofthethermalimpedancefromjunctiont ocaser q jc andcasetoambient. e.thestaticcharacteristicsinfigures1to6are obtainedusing<300 m spulses,dutycycle0.5%max. f.thesecurvesarebasedonthejunctiontocaset hermalimpedancewhichismeasuredwiththedevice mountedtoalargeheatsink,assuminga maximumjunctiontemperatureoft j(max) =150 c. g.thesetestsareperformedwiththedevicemounted on1in 2 fr4boardwith2oz.copper,inastillairenviron mentwitht a =25 c. h.l=60mh,i as =2a,v dd =150v,r g =10 ? ,startingt j =25 c www.freescale.net.cn 2/6 AOD3N50/aou3n50 500v, 3a n-channel mosfet
typical electrical and thermal characteristics 0 1 2 3 4 5 6 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics 55 c v ds =40v 25 c 125 c 1.0 2.0 3.0 4.0 5.0 0 1 2 3 4 5 6 7 r ds(on) ( w w w w ) i d (a) figure 3: on - resistance vs. drain current and gate v gs =10v 0 0.5 1 1.5 2 2.5 3 100 50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =1.5a 40 1.0e04 1.0e03 1.0e02 1.0e01 1.0e+00 1.0e+01 1.0e+02 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c i d =30a 25 125 figure 3: on - resistance vs. drain current and gate voltage 0.8 0.9 1 1.1 1.2 100 50 0 50 100 150 200 bv dss (normalized) t j ( o c) figure 5: break down vs. junction temperature www.freescale.net.cn 3/6 AOD3N50/aou3n50 500v, 3a n-channel mosfet
typical electrical and thermal characteristics 0 3 6 9 12 15 0 2 4 6 8 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =400v i d =3a 1 10 100 1000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 200 400 600 800 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) t j(max) =150 c t a =25 c figure 9: maximum forward biased safe operating area (note f) case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) d=t on /t t j,pk =t a +p dm .z q jc .r q jc r q jc =2.2 c/w indescendingorder d=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse singlepulse t on t p d www.freescale.net.cn 4/6 AOD3N50/aou3n50 500v, 3a n-channel mosfet
typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 12: power de-rating (note b) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 13: current de-rating (note b) 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) t j(max) =150 c t a =25 c pulse width (s) figure 14: single pulse power rating junction-to-ca se (note g) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q jc normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note g) d=t on /t t j,pk =t a +p dm .z q jc .r q jc r q ja =55 c/w indescendingorder d=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse singlepulse t on t p d www.freescale.net.cn 5/6 AOD3N50/aou3n50 500v, 3a n-channel mosfet
+ vdc ig vds dut + vdc vgs vgs 10v qg qgs qgd charge gatechargetestcircuit&waveform + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istiveswitchingtestcircuit&waveforms t t r d(on) t on t d(off) t f t off vdd vgs id + vdc l vgs vds bv i unclampedinductiveswitching(uis)testcircuit& waveforms vds ar dss 2 e=1/2li ar ar vdd vgs vgs rg dut vdc id vgs i ig vgs + vdc dut l vgs vds isd isd dioderecoverytes tcircuit&waveforms vds vds+ i f ar di/dt i rm rr vdd vdd q=idt t rr www.freescale.net.cn 6/6 AOD3N50/aou3n50 500v, 3a n-channel mosfet
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